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| SUD15N06-90L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 15 14 rDS(on) (W) 0.065 @ VGS = 10 V 0.090 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD15N06-90L SUD15N06-90L--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAR EAR PD TJ, Tstg Limit "20 15 12 30 15 15 11 37 2a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Free Air, FR4 Board Mounta Junction-to-Case Notes: a. 1.36 x 2.1 surface mounted on 1" x 1" FR4 Board. Document Number: 71087 S-50281--Rev. E, 21-Feb-05 www.vishay.com Symbol RthJA RthJC Typical 60 3.3 Maximum 70 4.0 Unit _C/W 1 SUD15N06-90L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 10 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 10 A, TJ = 125_C VGS = 10 V, ID = 10 A, TJ = 175_C VGS = 4.5 V, ID = 5 A Forward Transconductanceb gfs VDS = 15 V, ID = 10 A 0.065 11 15 0.050 0.065 0.12 0.15 0.090 S W 60 1.0 2.0 3.0 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 2 W ID ^ 15 A, VGEN = 10 V, Rg = 2.5 W VDS = 30 V, VGS = 10 V, ID = 15 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 524 98 28 12 2 3.5 7 8 15 7 20 25 40 20 ns 20 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C) Pulsed Current Diode Forward Voltage Reverse Recovery Time ISM VSD trr IF = 15 A, VGS = 0 V IF = 15 A, di/dt = 100 A/ms 0.9 29 30 1.2 60 A V ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71087 S-50281--Rev. E, 21-Feb-05 SUD15N06-90L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 6 V 40 I D - Drain Current (A) I D - Drain Current (A) 5V 30 16 20 Transfer Characteristics 12 20 4V 8 TC = 125_C 25_C 0 -55_C 3 4 5 10 3V 4 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 VGS - Gate-to-Source Voltage (V) Transconductance 25 0.10 On-Resistance vs. Drain Current 20 g fs - Transconductance (S) TC = -55_C r DS(on)- On-Resistance ( W ) 25_C 125_C 0.08 VGS = 4.5 V 0.06 VGS = 10 V 15 10 0.04 5 0.02 0 0 4 8 12 16 20 0.00 0 4 8 12 16 20 ID - Drain Current (A) 1000 ID - Drain Current (A) 20 VDS = 30 V ID = 15 A Capacitance Gate Charge 800 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 16 600 Ciss 12 400 8 200 Crss 0 0 10 20 Coss 4 0 30 40 50 60 0 4 8 12 16 20 24 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71087 S-50281--Rev. E, 21-Feb-05 www.vishay.com 3 SUD15N06-90L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 10 A I S - Source Current (A) Source-Drain Diode Forward Voltage 2.0 rDS(on) - On-Resiistance (Normalized) 1.5 TJ = 150_C 10 1.0 TJ = 25_C 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0.0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) www.vishay.com 4 Document Number: 71087 S-50281--Rev. E, 21-Feb-05 SUD15N06-90L Vishay Siliconix THERMAL RATINGS 20 Drain Current vs. Case Temperature 50 Safe Operating Area 10 ms 16 I D - Drain Current (A) I D - Drain Current (A) 100 ms 10 *rDS(on) Limited 12 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms dc 8 4 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 Square Wave Pulse Duration (sec) 10-2 10-1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71087. Document Number: 71087 S-50281--Rev. E, 21-Feb-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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